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US 2025/0040227 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsKuan-Liang Liu, Szu-Han Huang
Life of this patent
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Abstract
A semiconductor device includes a gate structure, an insulating layer and two source/drain regions. A portion of the gate structure is embedded in a substrate. The insulating layer is disposed between the portion of the gate structure and the substrate and encompasses the portion of the gate structure. The two source/drain regions are disposed in the substrate and respectively located at two sides of the gate structure.
Claims23
A semiconductor device, comprising:
- a gate structure, wherein a portion of the gate structure is embedded in a substrate;
- an insulating layer disposed between the portion of the gate structure and the substrate and encompassing the portion of the gate structure;
- and
- two source/drain regions disposed in the substrate and respectively located at two sides of the gate structure.
1 more element
A semiconductor device, comprising:
- a substrate having a first region and a second region;
- a fin structure disposed in the first region;
- a first insulating structure disposed in the first region and surrounding the fin structure, wherein a portion of the fin structure protrudes from the first insulating structure;
- a first gate structure disposed in the first region and on the fin structure;
- a second gate structure disposed in the second region, wherein a portion of the second gate structure is embedded in the substrate;
- and
- an insulating layer disposed between the portion of the second gate structure and the substrate and encompassing the portion of the second gate structure.
4 more elements
A method for fabricating a semiconductor device, comprising:
- providing a substrate having a first region and a second region;
- forming a fin structure and a first insulating structure in the first region, wherein the first insulating structure surrounds the fin structure;
- forming a temporary insulating structure in the second region;
- removing a portion of the first insulating structure, so that a portion of the fin structure protrudes from the first insulating structure;
- removing a portion of the temporary insulating structure to form an insulating layer and a recess in the substrate;
- forming a first gate structure on the fin structure;
- and
- forming a second gate structure on the insulating layer and in the recess.
5 more elements
Dependencies are inferred from the claim text.