Integrated circuit, system and method of forming same

A method of fabricating an integrated circuit, the method comprising:

• fabricating a set of transistors and a dummy via in a front-side of a substrate;
• fabricating a first set of vias and a first set of conductors on a back-side of a thinned substrate on a first level, the first set of conductors being electrically coupled to the set of transistors by the first set of vias;
• fabricating a second set of vias on the back-side of the thinned substrate;
• and
• depositing a conductive material on the back-side of the thinned substrate on a second level thereby forming a second set of conductors, the second set of conductors being electrically coupled to the first set of conductors by the second set of vias.

A method of fabricating an integrated circuit, the method comprising:

• fabricating a set of active regions of a set of transistors and a dummy via in a front-side of a substrate;
• performing thinning on a back-side of the substrate opposite from the front-side;
• fabricating a first set of vias and a first set of conductors on the back-side of a thinned substrate, the first set of conductors being on a first back-side metal level, the first set of conductors being electrically coupled to the set of active regions by the first set of vias;
• fabricating a second set of vias on the back-side of the thinned substrate;
• and
• depositing a conductive material on the back-side of the thinned substrate on a second back-side metal level thereby forming a set of power rails and a second set of conductors, the set of power rails being electrically coupled to the first set of conductors by the second set of vias, and the second set of conductors being electrically coupled to the first set of conductors by the second set of vias, the second back-side metal level being different from the first back-side metal level.