Semiconductor device

A semiconductor device, comprising:

• a semiconductor layer;
• a gate trench formed in the semiconductor layer;
• an insulation layer formed on the semiconductor layer;
• a gate electrode embedded in the gate trench via the insulation layer;
• a gate interconnect formed on the insulation layer and electrically connected to the gate electrode;
• a protective trench formed in the semiconductor layer;
• a protective electrode embedded in the protective trench via the insulation layer;
• a first floating trench and a second floating trench;
• a first floating electrode embedded in the first floating trench via the insulation layer, the first floating electrode being electrically floating;
• and
• a second floating electrode embedded in the second floating trench via the insulation layer, the second floating electrode being electrically floating, wherein
• the semiconductor layer includes a peripheral region including an edge of the semiconductor layer in plan view, the protective trench being formed in the peripheral region,
• the gate trench includes a peripheral gate trench portion arranged in the peripheral region and surrounded by the protective trench in plan view,
• the first floating trench and the second floating trench are formed in a region of the semiconductor layer located between the peripheral gate trench portion and the protective trench, and
• the first floating trench is arranged closer to the second floating trench than to the peripheral gate trench portion.