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US 2025/0040221 A1Published application
High-electron-mobility transistor
AssigneeGlobalFoundries U.S. Inc.
InventorsJohnatan A. KANTAROVSKY, Mark D. LEVY, Alvin J. JOSEPH, Santosh SHARMA, Michael J. ZIERAK
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a gate structure; a first field plate on a first side of the gate structure; and a second field plate on a second side of the gate structure, independent from the first field plate.
Claims20
A structure comprising:
- a gate structure;
- a first field plate on a first side of the gate structure;
- and
- a second field plate on a second side of the gate structure, independent from the first field plate.
1 more element
A structure comprising:
- a gate structure;
- a first field plate on a drain side of and electrically isolated from the gate structure;
- and
- a second field plate on a source side of and electrically isolated from the first field plate and the gate structure.
1 more element
A method comprising:
- forming a gate structure;
- forming a first field plate on a first side of the gate structure;
- and
- forming a second field plate on a second side of the gate structure, independent from the first field plate.
1 more element
Dependencies are inferred from the claim text.