Semiconductor device
AssigneeNational Sun Yat-Sen University
InventorJyi-Tsong LIN
Life of this patent
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Abstract
A semiconductor device includes a semiconductor layer, a gate structure, a control-source electrode plate, and a drain electrode. The semiconductor layer has a channel region. The gate structure has a surface to contact the semiconductor layer, in which the gate structure overlaps the channel region of the semiconductor layer along a direction perpendicular to the surface of the gate structure. The control-source electrode plate is in contact with the semiconductor layer, in which the control-source electrode plate covers the gate structure and the channel region of the semiconductor layer along the direction perpendicular to the surface of the gate structure. The drain electrode is in contact with the semiconductor layer.
Claims17
A semiconductor device, comprising:
- a semiconductor layer, having a channel region;
- a gate structure, having a surface to contact the semiconductor layer, wherein the gate structure overlaps the channel region of the semiconductor layer along a direction perpendicular to the surface of the gate structure;
- a control-source electrode plate in contact with the semiconductor layer, wherein the control-source electrode plate covers the gate structure and the channel region of the semiconductor layer along the direction perpendicular to the surface of the gate structure;
- and
- a drain electrode in contact with the semiconductor layer.
A semiconductor device, comprising:
- a semiconductor layer, having a channel region;
- a gate structure, having a surface to contact the semiconductor layer, wherein the gate structure overlaps the channel region of the semiconductor layer along a direction perpendicular to the surface of the gate structure;
- a control-source electrode plate in contact with the semiconductor layer, wherein the control-source electrode plate covers the gate structure and the channel region of the semiconductor layer along the direction perpendicular to the surface of the gate structure;
- a charge-enhanced oxide layer between the control-source electrode plate and the semiconductor layer;
- and
- a drain electrode in contact with the semiconductor layer.
Dependencies are inferred from the claim text.