Semiconductor device and power conversion apparatus
AssigneeMitsubishi Electric Corporation
InventorsRen KUGA, Ryo GOTO
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Abstract
The technique disclosed in the present specification is a technique for effectively reducing resistance even when the electrode shape has irregularities. A technique disclosed in the present specification is a semiconductor device includes a semiconductor chip, a case that houses the semiconductor chip therein, a main electrode electrically connected to the semiconductor chip via a wire and partially exposed to outside from the case, and a conductive material applied to a front surface of the main electrode exposed from the case, in which the front surface of the main electrode is the surface connected to a bus bar.
Claims7
A semiconductor device comprising:
- a semiconductor chip;
- a case that houses the semiconductor chip therein;
- a main electrode electrically connected to the semiconductor chip via a wire and partially exposed to outside from the case;
- and
- a conductive material applied to a front surface of the main electrode exposed from the case, wherein
- the front surface of the main electrode is the surface connected to a bus bar.
Dependencies are inferred from the claim text.