Radiation detectors having sulfide-containing anode contacts and methods of fabrication thereof

Abstract

A radiation detector includes a radiation-sensitive semiconductor substrate, a cathode electrode disposed over a first surface of the radiation-sensitive semiconductor material substrate, and at least one anode electrode disposed over a second surface of the radiation-sensitive semiconductor material substrate, where the at least one anode electrode includes a semiconductor material layer including cadmium sulfide located between a metallic material and the semiconductor material substrate. In one embodiment, the radiation-sensitive semiconductor substrate includes cadmium zinc telluride (CZT), and the semiconductor material layer includes Cd1-xZnxTeyS1-y, where 0≤x≤0.5 and 0≤y≤0.5. Further embodiments include methods of fabricating a radiation detector that include exposing a surface of a radiation-sensitive semiconductor material substrate to a gas containing hydrogen sulfide at an elevated temperature to form a sulfide-containing semiconductor material layer.

Dependencies are inferred from the claim text.