Method for processing silicon substrate and method for processing liquid ejection head substrate
AssigneeCanon Kabushiki Kaisha
InventorATSUNORI TERASAKI
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Abstract
A method for processing a silicon substrate is provided the method including repeatedly and alternately performing: an etching step of forming an etching pattern on the silicon substrate; and a protective film formation step of forming a protective film on a wall surface of the silicon substrate exposed in the etching step, wherein the method includes a protective film removal step of removing the protective film, which has been formed in the protective film formation step, by using a peeling solution, and wherein in the protective film formation step, the protective film is formed by using a mixed gas including 2,3,3,3-tetrafluoropropene and perfluorocyclobutane.
Claims10
A method for processing a silicon substrate, the method comprising repeatedly and alternately performing:
- an etching step of forming an etching pattern on the silicon substrate;
- and
- a protective film formation step of forming a protective film on a wall surface of the silicon substrate exposed in the etching step,
- wherein the method for processing a silicon substrate includes a protective film removal step of removing the protective film, which has been formed in the protective film formation step, by using a peeling solution, and
- wherein in the protective film formation step, the protective film is formed by using a mixed gas including 2,3,3,3-tetrafluoropropene and perfluorocyclobutane.
A method for processing a liquid ejection head substrate, the method comprising repeatedly and alternately performing:
- an etching step of forming an etching pattern on the liquid ejection head substrate;
- and
- a protective film formation step of forming a protective film on side walls of the liquid ejection head substrate exposed in the etching step,
- with at least one of a liquid supply port for supplying liquid and a flow path communicating with the liquid supply port being formed in the liquid ejection head substrate,
- wherein the method for processing a liquid ejection head substrate includes a protective film removal step of removing the protective film, which has been formed in the protective film formation step, by using a peeling solution, and
- wherein in the protective film formation step, the protective film is formed by using a mixed gas including 2,3,3,3-tetrafluoropropene and perfluorocyclobutane.
Dependencies are inferred from the claim text.