Anchor structure
AssigneeLawrence Semiconductor Research Laboratory, Inc.
InventorsBishnu Prasanna Gogoi, Chantal Arena
Life of this patent
Estimating the term…
Abstract
A semiconductor device is disclosed having one or more anchors that is configured to support a moving mass. The one or more anchors are formed in or on the semiconductor substrate. The one or more anchors are attached to the semiconductor substrate. An intermediate layer is formed overlying the semiconductor substrate. A device layer is formed overlying the intermediate layer. The device layer, the intermediate layer, and the semiconductor substrate are single crystal. The moving mass is formed in the device layer. The at least one anchor comprises a dielectric material coupled to the semiconductor substrate. The moving mass couples to the at least one anchor. Portions of the intermediate layer are removed to free the moving mass in relation the semiconductor substrate.
Claims34
A semiconductor device having one or more anchors configured to support a moving mass comprising:
- a semiconductor substrate;
- an intermediate layer overlying the semiconductor substrate;
- a device layer formed overlying the intermediate layer wherein the semiconductor substrate, the intermediate layer, and the device layer are single crystal and wherein a moving mass is formed in the device layer;
- and
- at least one anchor configured to anchor the moving mass, the at least one anchor comprising a dielectric material coupled to the semiconductor substrate wherein the moving mass couples to the at least one anchor, and wherein the intermediate layer is configured to be removed underlying the moving mass.
A method of forming at least one anchor coupled to a moving mass for a Micro-Electrical-Mechanical system (MEMS) device comprising:
- growing an intermediate layer by epitaxy overlying a semiconductor substrate;
- growing a device layer by epitaxy overlying the intermediate layer wherein the semiconductor substrate, the intermediate layer, and the device layer are single crystal and wherein the intermediate layer and the device layer are relaxed;
- patterning a first mask layer;
- etching the device layer and the intermediate layer as defined by the first mask layer wherein a surface of the semiconductor substrate is exposed after the etch;
- depositing a dielectric layer;
- depositing a refill layer;
- etching back the refill layer and the dielectric layer to expose the first mask layer;
- and
- removing the first mask layer wherein at least one anchor comprises the dielectric layer and the refill layer coupled to the semiconductor substrate.
A method of forming at least one anchor coupled to a moving mass for a Micro-Electrical-Mechanical system (MEMS) device comprising:
- growing an intermediate layer overlying a semiconductor substrate wherein the intermediate layer comprises SiGe;
- growing a device layer overlying the intermediate layer wherein the semiconductor substrate and the device layer comprise silicon, wherein the semiconductor substrate, the intermediate layer, and the device layer are single crystal, and wherein the device layer and the intermediate layer are relaxed;
- and
- forming the at least one anchor coupled to the semiconductor substrate wherein the at least one anchor comprises a dielectric material, wherein the moving mass comprises a region of the device layer, wherein the intermediate layer is removed underlying the moving mass, and wherein the at least one anchor is configured to support movement of the moving mass in relation to the semiconductor substrate.
Dependencies are inferred from the claim text.