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US 2025/0031431 A1Published application
Method for manufacturing semiconductor device
AssigneeNanya Technology Corporation
InventorJHEN-YU TSAI
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Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming a trench in a substrate; disposing an upper gate electrode in the trench; disposing a first dielectric layer on the upper gate electrode in the trench; and disposing a capping layer on the first dielectric layer in the trench.
Claims10
A method of manufacturing a semiconductor device, comprising:
- providing a substrate having a trench;
- and
- forming a gate structure in the trench, comprising:
- forming an upper gate electrode;
- and
- forming a capping layer on the upper gate electrode;
- wherein a distance between the capping layer and the substrate is greater than a distance between the upper gate electrode and the substrate.
4 more elements
Dependencies are inferred from the claim text.