Gate-all-around field effect transistor having trench internal spacer, and method for manufacturing same
AssigneeSamsung Electronics Co., Ltd.
InventorsRock-Hyun BAEK, Jin-Su JEONG, Jun-Sik YOON
Life of this patent
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Abstract
The present disclosure discloses a gate-all-around field effect transistor which not only can suppress the occurrence of punch through in the lower end of the substrate and direct leakage of current from the source region/drain region into the lower ends of the channels, but also can facilitate heat release of the substrate by forming trench inner spacers (TIS) and thus preventing source region/drain region impurities from diffusing into the substrate, and a method for manufacturing the same.
Claims21
-12. (canceled)
A gate-all-around field effect transistor including:
- a substrate in which a first groove and a second groove that have a trench structure are formed;
- a source region/a drain region formed to be spaced apart from each other on the substrate;
- a plurality of channels connecting the source region/drain region;
- a plurality of gate stacks having a gate-all-around (GAA) structure surrounding the circumference of at least some of the channels;
- first inner spacers included between the source region/drain region and the gate stacks;
- second inner spacers located on the bottom of a lowermost channel among the plurality of channels and included between the source region/drain region and a lowermost gate stack;
- and
- trench inner spacers connected to the second inner spacers and vertically extended up to the inside of the first groove and the second groove.
A gate-all-around field effect transistor including:
- a substrate;
- a punch through stopper (PTS) which is positioned on the substrate and in which a first groove and a second groove that have a trench structure are formed;
- a source region/a drain region formed to be spaced apart from each other on the punch through stopper (PTS);
- a plurality of channels connecting the source region/drain region;
- a plurality of gate stacks having a gate-all-around (GAA) structure surrounding the circumference of at least some of the channels;
- first inner spacers included between the source region/drain region and the gate stacks;
- second inner spacers located on the bottom of a lowermost channel among the plurality of channels and included between the source region/drain region and a lowermost gate stack;
- and
- trench inner spacers connected to the second inner spacers and vertically extended up to the inside of the first groove and the second groove.
A gate-all-around field effect transistor including:
- a substrate in which a first groove and a second groove that have a trench structure are formed;
- a source region/a drain region formed to be spaced apart from each other on the substrate;
- a plurality of channels connecting the source region/drain region;
- a plurality of gate stacks having a gate-all-around (GAA) structure surrounding the circumference of at least some of the channels;
- an outer spacer disposed on side surfaces of the uppermost gate stack of the plurality of gate stacks;
- first inner spacers included between the source region/drain region and the gate stacks;
- second inner spacers located on the bottom of a lowermost channel among the plurality of channels and included between the source region/drain region and a lowermost gate stack;
- and
- trench inner spacers connected to the second inner spacers and vertically extended up to the inside of the first groove and the second groove;
- a contact metal layer disposed on a top of the source region/drain region;
- and
- A silicide disposed between the source region/drain region and the contact metal layer.
Dependencies are inferred from the claim text.