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US 2025/0031402 A1Published application
HYBRID TYPE AlGaN/GaN HEMT DEVICE
OwnerChih-Shu Huanginventor
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Abstract
The present invention relates to a structure of hybrid type AlGaN/GaN high electron mobility transistor (HEMT) Device, which comprises a silicon substrate structure, and both of a depletion-mode (D-mode) AlGaN/GaN HEMT and a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT disposed on the silicon substrate structure. By connecting the depletion-mode (D-mode) AlGaN/GaN HEMT to the p-GaN gate structure of the p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the p-GaN gate E-mode AlGaN/GaN HEMT may be protected under any gate voltage.
Claims18
A hybrid type AlGaN/GaN HEMT device, comprising:
- a silicon substrate structure;
- a first D-mode AlGaN/GaN HEMT, disposed on said silicon substrate structure;
- and
- a p-GaN gate E-mode AlGaN/GaN HEMT, disposed on said silicon substrate structure and on one side of said first D-mode AlGaN/GaN HEMT, including a p-GaN gate structure, a 2DEG below said p-GaN gate structure being depleted while said first D-mode AlGaN/GaN HEMT is connected with an input voltage and said p-GaN gate E-mode AlGaN/GaN HEMT is connected with a drain voltage, said p-GaN gate structure coupled to said first D-mode AlGaN/GaN HEMT, and a source of said p-GaN gate E-mode AlGaN/GaN HEMT coupled to a gate of said first D-mode AlGaN/GaN HEMT.
1 more element
Dependencies are inferred from the claim text.