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US 2025/0031401 A1Published application
Nanosheet structures with corner spacer
AssigneeGlobalFoundries U.S. Inc.
InventorsBartlomiej J. PAWLAK, Judson R. HOLT
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to nanosheet transistor structures and methods of manufacture. The structure includes: a plurality of stacked semiconductor nanosheets over a semiconductor substrate; a plurality of gate structures surrounding individual nanosheets of the plurality of semiconductor nanosheets; an inner sidewall spacer adjacent each of the plurality of gate structures; and corner spacers under the plurality of stacked semiconductor nanosheets.
Claims20
A structure comprising:
- a plurality of stacked semiconductor nanosheets over a semiconductor substrate;
- a plurality of gate structures surrounding individual nanosheets of the plurality of semiconductor nanosheets;
- an inner sidewall spacer adjacent each of the plurality of gate structures;
- and
- corner spacers under the plurality of stacked semiconductor nanosheets.
2 more elements
A structure comprising:
- a fin structure comprising semiconductor material and at least one gate structure;
- a source region on a first side of the at least one gate structure;
- a drain region on a second side of the at least one gate structure;
- and
- corner spacers under the fin structure, the source region and the drain region.
2 more elements
A method comprising:
- forming a plurality of stacked semiconductor nanosheets over a semiconductor substrate;
- forming a plurality of gate structures surrounding individual nanosheets of the plurality of semiconductor nanosheets;
- forming an inner sidewall spacer adjacent each of the plurality of gate structures;
- and
- forming corner spacers under the plurality of stacked semiconductor nanosheets.
2 more elements
Dependencies are inferred from the claim text.