US 2025/0031394 A1Published application

Semiconductor device

AssigneeFuji Electric Co., Ltd.

InventorsShin MIYAMOTO, Yuichi HASHIZUME

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Abstract

A semiconductor device, including: a semiconductor substrate including a first-conductivity-type region at a first main surface; a second-conductivity-type region selectively provided at the first main surface and extending in a first direction parallel to the first main surface; a first electrode provided at the first main surface, forming a Schottky junction with the first-conductivity-type region and being in contact with the second-conductivity-type region; and a second electrode provided on a second main surface. The first-conductivity-type region and the second-conductivity-type region includes a plurality of upper surface portions that are aligned in both the first direction and a second direction parallel to the first main surface and perpendicular to the first direction. Each of the upper surface portions forms a first step with another upper surface portion adjacent thereto in the second direction, and forms a second or third step with another upper surface portion adjacent thereto in the first direction.

Claims17

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate of a first conductivity type, having a first main surface and a second main surface opposite to each other, the semiconductor substrate having a first-conductivity-type region at the first main surface thereof;
a second-conductivity-type region of a second conductivity type, selectively provided at the first main surface of the semiconductor substrate, both the second-conductivity-type region, and the first-conductivity-type region extending along the second-conductivity-type region, extend at the first main surface in a first direction parallel to the first main surface;
a first electrode provided at the first main surface of the semiconductor substrate, the first electrode forming a Schottky junction with the first-conductivity-type region and being in contact with the second-conductivity-type region at the first main surface;
and
a second electrode provided at the second main surface of the semiconductor substrate, wherein
an upper surface of the first-conductivity-type region includes a plurality of first-conductivity-type upper surface portions, and an upper surface of the second-conductivity-type region includes a plurality of second-conductivity-type upper surface portions, the plurality of first-conductivity-type upper surface portions and the plurality of second-conductivity-type upper surface portions being aligned in both the first direction and a second direction, which is parallel to the first main surface and perpendicular to the first direction;
in the second direction, each of the first-conductivity-type upper surface portions has a first difference in height, in a depth direction of the semiconductor device, with one of the second-conductivity-type upper surface portions adjacent thereto, to thereby form a first step therebetween;
in the first direction, each of the first-conductivity-type upper surface portions has a second difference in height, in the depth direction of the semiconductor device, with one of the first-conductivity-type upper surface portions adjacent thereto, to thereby form a second step therebetween;
and
in the first direction, each of the second-conductivity-type upper surface portions has a third difference in height, in the depth direction of the semiconductor device, with one of the second-conductivity-type upper surface portions adjacent thereto, to thereby form a third step therebetween.

7 more elements

A semiconductor device, comprising:

a semiconductor substrate of a first conductivity type, having a first main surface and a second main surface opposite to each other, the semiconductor substrate including a first-conductivity-type region at the first main surface thereof;
a first trench provided at the first main surface of the semiconductor substrate and extending in a first direction parallel to the first main surface;
a second-conductivity-type region selectively provided in the semiconductor substrate, the second-conductivity-type region extending along the first trench in the first direction, underlying a bottom of the first trench, and extending along the first-conductivity-type region in the first direction;
a second trench provided at the first main surface and intersecting the first-conductivity-type region and the second-conductivity-type region, a bottom of the second trench having portions thereof in the first-conductivity-type region and the second-conductivity-type region, respectively;
a first electrode provided at the first main surface and being embedded in the first trench and the second trench, the first electrode forming a Schottky junction with the first-conductivity-type region and being in contact with second-conductivity-type region;
a second electrode provided at the second main surface of the semiconductor substrate.

3 more elements

Dependencies are inferred from the claim text.