Thermal dissipation in stacked memory devices and associated systems and methods
AssigneeMicron Technology, Inc.
InventorsLingming Yang, Raghukiran Sreeramaneni, Nevil N. Gajera
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AssigneeMicron Technology, Inc.
InventorsLingming Yang, Raghukiran Sreeramaneni, Nevil N. Gajera
Estimating the term…
High-bandwidth memory (HBM) devices and associated systems and methods are disclosed herein. In some embodiments, the HBM devices include a first die, a plurality of second dies carried by a signal routing region of the first die, and active through substrate vias (TSVs) positioned within a footprint of the signal routing region. The active TSVs extend from a first metallization layer in the first die to a second metallization layer in an uppermost memory die. The HBM devices also include a cooling network configured to transport heat away from the first die. For example, the cooling network can include a thermally conductive layer carried by a thermal region of the first die and cooling TSVs in contact with the thermally conductive layer. The thermally conductive TSVs extend from the thermally conductive layer to an elevation at or above a top surface of the uppermost memory die.
A high-bandwidth memory (HBM) device, comprising:
A system-in-package (SiP) device, comprising:
A stacked semiconductor device, comprising:
Dependencies are inferred from the claim text.