US 2025/0031384 A1 · CROSSBAR ARRAY CIRCUIT WITH 3D VERTICAL RRAM

Abstract

Provided are 3D One-Transistor-N-RRAM (1TNR) structures and One-Selector-One-RRAM (1S1R) structures and methods for manufacturing the same. An example 3D 1TNR structure comprises: a plurality of gate lines; and a plurality of crossbar arrays (e.g., a first crossbar array and a second crossbar array). The first and second crossbar arrays are positioned on a first vertical plane and a second vertical plane, respectively. Each crossbar array in the plurality of crossbar arrays includes a first plurality of bit lines and a second plurality of word lines; Each word line in the second plurality of word lines is connected to a source and a destination of a second transistor; and each gate line in the plurality of gate lines is connected to a gate of a first transistor located in the first crossbar array and a gate of a second transistor located in the second crossbar array.

Claims13

Dependent claims

A method of manufacturing a crossbar array circuit comprising:

providing a substrate;
alternatingly depositing, on the substrate, one or more RRAM metal layers and one or more dielectric layers to form an RRAM stack on the substrate;
etching the RRAM stack to form a via;
oxidizing the one or more RRAM metal layers through the via to form one or more RRAM oxide layers;
forming a contact layer on a sidewall of the via;
and
forming a first electrode to fill the via.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

18/907,202Filed 4 Oct 2024

Priority

25 Jul 2019

Published

23 Jan 2025

Term ends

Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10B 63/845
Arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays: the switching components being connected to a common vertical conductor
H10B 63/20
Resistance change memory devices, e.g. resistive RAM [ReRAM] devices: comprising selection components having two electrodes, e.g. diodes
H10B 63/22
Comprising selection components having two electrodes, e.g. diodes: of the metal-insulator-metal type
H10B 63/30
Resistance change memory devices, e.g. resistive RAM [ReRAM] devices: comprising selection components having three or more electrodes, e.g.…

Crossbar array circuit with 3d vertical rram

Life of this patent

Crossbar array circuit with 3d vertical rram

Life of this patent

Abstract

Claims13