Semiconductor devices and data storage systems including the same

A semiconductor device, comprising:

• a substrate including an active region;
• circuit devices on the active region;
• a device isolation region defining the active region;
• impurity regions in the active region on first and second sides of the circuit devices;
• a first electrode structure on the device isolation region, vertically overlapping the device isolation region, and extending in a first direction that is perpendicular to an upper surface of the substrate;
• a second electrode structure on the device isolation region, vertically overlapping the device isolation region, and spaced apart from the first electrode structure in a second direction perpendicular to the first direction;
• and
• an insulating structure between the first electrode structure and the second electrode structure,
• wherein each of the first electrode structure and the second electrode structure extends in a third direction perpendicular to the first direction and the second direction and has a plate shape.

A data storage system, comprising:

• a semiconductor storage device including a substrate, an active region in the substrate, circuit devices on the substrate, a device isolation region defining the active region, an interconnection structure electrically connected to the circuit devices, a capacitor structure on the device isolation region and vertically overlapping the device isolation region, memory cells, and input/output pad;
• and
• a controller electrically connected to the semiconductor storage device through the input/output pad and configured to control the semiconductor storage device,
• wherein the capacitor structure includes:
• a first electrode structure extending in a first direction perpendicular to an upper surface of the substrate and including first capacitor electrodes stacked in the first direction, a second electrode structure including second capacitor electrodes stacked in the first direction, and first insulating structure between the first electrode structure and the second electrode structure,
• wherein the first capacitor electrodes and the second capacitor electrodes are spaced apart from each other and arranged alternately in the second direction parallel to an upper surface of the substrate, extend in a third direction perpendicular to the first direction and the second direction, and
• wherein each of the first capacitor electrodes and the second capacitor electrodes has a plate shape.