HALF-BRIDGE GaN DRIVER WITH INTEGRATED GaN FET
OwnerAnant Kamath, Taisuke Kazama +1inventors
InventorsAnant Kamath, Taisuke Kazama, Sombuddha Chakraborty
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Abstract
An integrated circuit is provided which comprises a transistor and a driver coupled to a gate of the transistor. In at least one example, the driver controls an operation of the transistor, wherein the driver is operable in a first configuration as a low-side gate driver for a voltage regulator, and wherein the transistor is operable in the first configuration as a low-side switch for the voltage regulator. In at least one example, the driver is operable in a second configuration as a high-side gate driver for the voltage regulator, and wherein the transistor is operable in the second configuration as a high-side switch for the voltage regulator.
Claims20
An integrated circuit comprising:
- a transistor;
- and
- a driver coupled to a gate of the transistor, wherein the driver controls an operation of the transistor, wherein the driver is operable in a first configuration as a low-side gate driver for a voltage regulator, wherein the transistor is operable in the first configuration as a low-side switch for the voltage regulator, wherein the driver is operable in a second configuration as a high-side gate driver for the voltage regulator, and wherein the transistor is operable in the second configuration as a high-side switch for the voltage regulator.
A system comprising:
- a controller circuitry to generate a pulse width modulated signal;
- a first integrated circuit coupled to the controller circuitry, wherein the first integrated circuit receives the pulse width modulated signal;
- a second integrated circuit coupled to the first integrated circuit;
- an inductor coupled to the first integrated circuit;
- a capacitor coupled to the inductor;
- and
- a load coupled to the capacitor and the inductor, wherein the first integrated circuit comprises a first transistor including GaN, wherein the first integrated circuit comprises a first driver that drives the first transistor in accordance with the pulse width modulated signal, wherein the second integrated circuit comprises a second transistor including GaN, and wherein the second integrated circuit comprises a second driver that receives a level-shifted signal from the first integrated circuit.
A method comprising:
- receiving a first pulse modulated signal;
- driving the first pulse modulated signal to a first GaN transistor of a first die;
- receiving a second pulse modulated signal;
- level-shifting the second pulse modulated signal to generate a level-shifted second pulse modulated signal;
- providing the level-shifted second pulse modulated signal to a second driver of a second die;
- and
- providing a boot-strap supply from the first die to the second die to power the second driver, wherein the second driver is to drive a second GaN transistor.
Dependencies are inferred from the claim text.