Wide band gap (wbg) devices based three-level active neutral point clamped (anpc) power module designs

A power module comprising:

• an upper arm structure that includes a first semiconductor switch, a second semiconductor switch and a fifth semiconductor switch;
• a lower arm structure that includes a third semiconductor switch, a fourth semiconductor switch and a sixth semiconductor switch;
• a first gate driving board, attached with the upper arm, wherein the first gate driving board includes a first gate driver connected to a first gate of the first semiconductor switch, a second gate driver connected to a second gate of the second semiconductor switch, and a third gate driver connected to a fifth gate of the fifth semiconductor switch;
• a second gate driving board, attached with the lower arm, wherein the second gate driving board includes a third gate driver connected to a third gate of the third semiconductor switch, a fourth gate driver connected to a fourth gate of the fourth semiconductor switch, and a sixth gate driver connected to a sixth gate of the sixth semiconductor switch.