Wide band gap (wbg) devices based three-level neutral point clamped (npc) power module designs

Abstract

A power module comprises: an upper arm structure that includes a first semiconductor switch, a second semiconductor switch and a first diode; a lower arm structure that includes a third semiconductor switch, a fourth semiconductor switch and a second diode; a first gate driving board, attached with the upper arm, wherein the first gate driving board includes a first gate driver connected to a first gate of the first semiconductor switch and a second gate driver connected to a second gate of the second semiconductor switch; a second gate driving board, attached with the lower arm, wherein the second gate driving board includes a third gate driver connected to a third gate of the third semiconductor switch and a fourth gate driver connected to a fourth gate of the fourth semiconductor switch; etc.

Dependencies are inferred from the claim text.