Semiconductor laser element

Abstract

Provided is a semiconductor laser element in which a step or edge crack is suppressed from being generated in an ITO layer or a semiconductor portion in contact with the ITO layer on a front end surface or a rear end surface during cleavage of a wafer in a ridge waveguide type end surface emission laser to improve reliability and yield. The configuration includes a GaN substrate, a nitride semiconductor layer of a first conductivity type laminated on the GaN substrate, an active layer laminated on the nitride semiconductor layer of the first conductivity type, a nitride semiconductor layer of a second conductivity type laminated on the active layer and formed in a ridge waveguide structure, transparent conductive film side bands laminated on the nitride semiconductor layer of the second conductivity type and extending in a band shape along a longitudinal direction toward both end surfaces, a transparent conductive film provided continuously with the transparent conductive film side bands, laminated on the nitride semiconductor layer of the second conductivity type, and formed with each of regions sandwiched between the transparent conductive film side bands and cut in a rectangular shape to be in contact with the end surfaces, an insulating layer laminated on the transparent conductive film, and a metal layer laminated on the insulating layer.

Dependencies are inferred from the claim text.