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US 2025/0029972 A1Published application
Three-dimensional memory device with backside source contact
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsKun ZHANG, Linchun WU, Wenxi ZHOU, Zhiliang XIA, Zongliang HUO
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Abstract
In an example, a three-dimensional (3D) memory device includes a stack structure including interleaved conductive layers and dielectric layers, a first semiconductor layer above the stack structure, a second semiconductor layer above the first semiconductor layer, channel structures extending vertically through the stack structure and the first semiconductor layer, and a source contact in contact with the second semiconductor layer.
Claims20
A three-dimensional (3D) memory device, comprising:
- a stack structure comprising interleaved conductive layers and dielectric layers;
- a first semiconductor layer above the stack structure;
- a second semiconductor layer above the first semiconductor layer;
- channel structures extending vertically through the stack structure and the first semiconductor layer;
- and
- a source contact in contact with the second semiconductor layer.
3 more elements
A three-dimensional (3D) memory device, comprising:
- a first semiconductor structure comprising a peripheral circuit;
- a second semiconductor structure bonded with the first semiconductor structure and comprising:
- a stack structure comprising interleaved conductive layers and dielectric layers;
- a first semiconductor layer above the stack structure;
- a second semiconductor layer above the first semiconductor layer;
- channel structures extending vertically through the stack structure and the first semiconductor layer;
- and
- a source contact in contact with the second semiconductor layer.
5 more elements
Dependencies are inferred from the claim text.