Display panel and manufacturing method thereof

Alight emitting diode comprising:

• a first light emitting part configured to emit light of a blue wavelength band;
• a second light emitting part on the first light emitting part and configured to emit light of a green wavelength band;
• a color conversion layer on a light emitting surface of the first light emitting part and comprising a quantum dot configured to emit light of a red wavelength band by exciting lights respectively emitted from the first light emitting part and the second light emitting part;
• and
• a plurality of contact electrodes comprising a first contact electrode, a second contact electrode, a third contact electrode, and a fourth contact electrode.

Alight emitting diode comprising:

• a first light emitting part configured to emit light of a blue wavelength band;
• a second light emitting part on the first light emitting part and configured to emit light of a green wavelength band;
• a transparent optical layer on a light emitting surface of the first light emitting part and configured to transmit light emitted from the first light emitting part and light emitted from the second light emitting part;
• a first contact electrode connected to a negative pole of the first light emitting part;
• a second contact electrode connected to a positive pole of the first light emitting part;
• a third contact electrode connected to a negative pole of the second light emitting part;
• and
• a fourth contact electrode connected to a positive pole of the second light emitting part.

A method of manufacturing a display panel, the method comprising:

• forming a plurality of first vertically stacked light emitting diodes and a plurality of second vertically stacked light emitting diodes, the plurality of second vertically stacked light emitting diodes comprising a first light emitting part configured to emit light of a first color at a wafer, and a second light emitting part configured to emit light of a second color at the wafer, the first color being different from the second color;
• transferring the plurality of first vertically stacked light emitting diodes and the plurality of second vertically stacked light emitting diodes from the wafer to a substrate;
• forming a plurality of first light emitting diodes by forming a color conversion layer configured to emit light of the first color and light of a third color at a light emitting surface of the plurality of first vertically stacked light emitting diodes, the third color being different from the second color;
• and
• forming a plurality of second light emitting diodes by forming a transparent optical layer at a light emitting surface of the plurality of second vertically stacked light emitting diodes.