Semiconductor devices including stacked dies with interleaved wire bonds and associated systems and methods

A method of manufacturing a memory device, the method comprising:

• electrically coupling a memory controller to a substrate;
• coupling a plurality of first memories of a first type to the substrate;
• arranging a plurality of second memories of a second type in a stack over one or more of the first memories;
• and
• forming wire bonds electrically coupling the second memories to the memory controller via the substrate such that alternating ones of the second memories are electrically coupled to a first in/out (I/O) channel or a second I/O channel of the memory controller via the substrate.

A method of manufacturing a memory device, the method comprising:

• arranging a plurality of first memories and second memories in a stack, wherein the first memories are interleaved between the second memories in the stack;
• forming first wire bonds electrically coupling the first memories to a first in/out (I/O) channel of a memory controller;
• and
• forming second wire bonds electrically coupling the second memories to a second I/O channel of the memory controller.