Bonding method and bonding system

A bonding system, comprising:

• a first hydrophilizing device configured to hydrophilize a first surface of a first semiconductor substrate;
• a second hydrophilizing device configured to hydrophilize a second surface of a second semiconductor substrate;
• a bonding device configured to bond the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate;
• and
• an annealing device configured to perform heat treatment on the first semiconductor substrate and the second semiconductor substrate to enhance bonding strength between the first semiconductor substrate and the second semiconductor substrate,
• wherein the annealing device is configured to:
• perform heat treatment on the first semiconductor substrate and the second semiconductor substrate in a first temperature range;
• and
• perform heat treatment on the first semiconductor substrate and the second semiconductor substrate at a target temperature after performing the heat treatment in the first temperature range, and
• the first temperature range is lower than the target temperature.

A bonding system, comprising:

• a first activation device configured to activate a bonding surface of a first semiconductor substrate;
• a first hydrophilizing device configured to hydrophilize the bonding surface of the first semiconductor substrate, the first semiconductor substrate including a base substrate and a semiconductor element, a circuit or a terminal disposed on the base substrate;
• a second activation device configured to activate a bonding surface of a second semiconductor substrate;
• a second hydrophilizing device configured to hydrophilize the bonding surface of the second semiconductor substrate, the second semiconductor substrate including a base substrate and a plurality of semiconductor elements, circuits or terminals disposed on the base substrate;
• a bonding device configured to detach the first semiconductor substrate from a second die carrier and position the bonding surface of the first semiconductor substrate to face the bonding surface of the second semiconductor substrate;
• and
• an annealing device configured to perform heat treatment on the first semiconductor substrate and the second semiconductor substrate at multiple temperature ranges to enhance bonding strength between the first semiconductor substrate and the second semiconductor substrate.