Semiconductor structure and method for manufacturing the same
AssigneeNanya Technology Corporation
InventorTSE-YAO HUANG
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Abstract
The present application provides a semiconductor structure having a porous structure between a conductive pad and a metal layer. The semiconductor structure includes: a substrate including an interconnection structure; a dielectric layer disposed over the substrate; a conductive pad disposed over the dielectric layer; a passivation layer, disposed over the dielectric layer and partially exposing the conductive pad; and a porous layer, surrounded by the dielectric layer and extending between the substrate and the conductive pad. A method of manufacturing the semiconductor structure is also disclosed.
Claims11
A method of manufacturing a semiconductor structure, comprising:
- forming a dielectric layer over a substrate;
- forming an opening in the dielectric layer;
- forming a first liner conformal to the opening;
- forming a porous layer in the opening and surrounded by the first liner;
- forming a conductive via penetrating the dielectric layer;
- and
- forming a conductive pad over the dielectric layer, wherein the conductive pad covers the porous layer and the conductive via.
Dependencies are inferred from the claim text.