Light-emitting diode, light-emitting diode chiplet and light-emitting device

A light-emitting diode (LED), comprising:

• a substrate, having a upper surface and a lower surface disposed opposite to the upper surface;
• an epitaxial layer, disposed on the upper surface of the substrate, wherein the epitaxial layer comprises:
• a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked in that order;
• and
• a protective layer, covering the epitaxial layer;
• wherein the epitaxial layer is divided into a plurality of chiplets, each chiplet comprises:
• sidewalls intersecting in transverse and longitudinal directions, and the sidewalls of each chiplet comprise:
• transverse sidewalls and longitudinal sidewalls;
• every adjacent two of the plurality of chiplets define a dicing channel, and the dicing channels of the plurality of chiplets comprise transverse dicing channels and longitudinal dicing channels extending respectively in the transverse and longitudinal directions;
• and the protective layer covers the dicing channels of the plurality of chiplets and the sidewalls of the plurality of chiplets, the protective layer is provided with a patterned structure in each intersecting area of the transverse dicing channels and the longitudinal dicing channels, and the patterned structure comprises a groove extending toward the substrate.