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US 2025/0029926 A1Published application
Method of forming stacked trench contacts and structures formed thereby
AssigneeIntel Corporation
InventorsBernhard SELL, Oleg GOLONZKA
Life of this patent
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Abstract
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an ILD disposed on a top surface of a metal gate disposed on the substrate.
Claims20
An integrated circuit structure, comprising:
- a first gate structure;
- a second gate structure laterally spaced apart from the first gate structure;
- a third gate structure laterally spaced apart from the second gate structure;
- a first source or drain region between the first and second gate structures;
- a second source or drain region between the second and third gate structures;
- a first contact structure over the first source or drain region;
- a second contact structure over the second source or drain region;
- a third contact structure in contact with the first contact structure, the third contact structure having a bottom portion narrower than a top portion of the first contact structure;
- a first dielectric spacer laterally between the first gate structure and the first contact structure;
- a second dielectric spacer laterally between the second gate structure and the first contact structure;
- a third dielectric spacer laterally between the second gate structure and the second contact structure;
- a fourth dielectric spacer laterally between the third gate structure and the second contact structure;
- a nitride etch stop layer having a first portion laterally between the first dielectric spacer and the first contact structure, and a second portion laterally between the third dielectric spacer and the second contact structure;
- an interlayer dielectric having a first portion laterally between the first portion of the nitride etch stop layer and the first contact structure, and a second portion laterally between the second portion of the nitride etch stop layer and the second contact structure;
- and
- a dielectric layer above the first, second and third gate structures.
13 more elements
A method of fabricating an integrated circuit structure, the method comprising:
- forming a first gate structure;
- forming a second gate structure laterally spaced apart from the first gate structure;
- forming a third gate structure laterally spaced apart from the second gate structure;
- forming a first source or drain region between the first and second gate structures;
- forming a second source or drain region between the second and third gate structures;
- forming a first contact structure over the first source or drain region;
- forming a second contact structure over the second source or drain region;
- forming a third contact structure in contact with the first contact structure, the third contact structure having a bottom portion narrower than a top portion of the first contact structure;
- forming a first dielectric spacer laterally between the first gate structure and the first contact structure;
- forming a second dielectric spacer laterally between the second gate structure and the first contact structure;
- forming a third dielectric spacer laterally between the second gate structure and the second contact structure;
- forming a fourth dielectric spacer laterally between the third gate structure and the second contact structure;
- forming a nitride etch stop layer having a first portion laterally between the first dielectric spacer and the first contact structure, and a second portion laterally between the third dielectric spacer and the second contact structure;
- forming an interlayer dielectric having a first portion laterally between the first portion of the nitride etch stop layer and the first contact structure, and a second portion laterally between the second portion of the nitride etch stop layer and the second contact structure;
- and
- forming a dielectric layer above the first, second and third gate structures.
13 more elements
Dependencies are inferred from the claim text.