Method for forming three-dimensional integrated structure

A method for forming a three-dimensional integrated structure, comprising:

• providing a substrate having conductive features therein;
• sequentially forming an etch stop layer and a sacrificial material layer over the substrate covering the conductive features;
• patterning the sacrificial material layer to form sacrificial mask patterns on the etch stop layer;
• forming a first metallic material layer with first openings;
• forming a first dielectric material layer over the first metallic material layer and forming second openings in the first dielectric material layer and in the etch stop layer at bottoms of the first openings;
• and
• forming capacitor structures inside the first openings and the second openings, wherein each of the capacitor structures includes an inner metallic pillar, an inner dielectric sheath surrounding the inner metallic pillar, a metallic sheath surrounding the inner dielectric sheath, and an outer dielectric sleeve surrounding the metallic sheath, and the capacitor structures are laterally encapsulated by the first metallic material layer and the capacitor structure penetrate through the first metallic material layer to reach the conductive features.

A method, comprising:

• providing a material layer with connection features therein;
• forming sacrificial mask patterns over the material layer;
• forming a first metallic material layer covering the sacrificial mask patterns and filling up gaps between the sacrificial mask patterns;
• removing the sacrificial mask patterns to form first openings extending through the first metallic material layer;
• forming a first dielectric material layer over the first metallic material layer covering the first openings;
• forming second openings in the first dielectric material layer at bottoms of the first openings;
• forming a second metallic material layer on the first dielectric material layer, covering the first dielectric material layer inside the first openings and covering the second openings;
• forming a second dielectric material layer on the second metallic material layer covering the second metallic material layer inside the first openings and the second openings;
• forming a third metallic material layer on the second dielectric material layer covering the second dielectric material layer inside the first and second openings;
• and
• partially removing the third metallic material layer, the second dielectric material layer, the second metallic material layer and the first dielectric material layer until the first metallic material layer is exposed so as to form third metallic pillars, second dielectric sheaths, second metallic sheaths and first dielectric sleeves within the first and second openings.