Semiconductor device comprising a capacitor

A semiconductor device, comprising:

• a capacitor including a first connection terminal, a second connection terminal, and a second insulating member disposed between the first connection terminal and the second connection terminal, wherein the first connection terminal and the second connection terminal extend to an outside, and
• a semiconductor module including a multi-layer terminal portion in which a first power terminal, a first insulating member, and a second power terminal are sequentially stacked, wherein
• the first power terminal includes a first bonding area electrically connected to the first connection terminal,
• the second power terminal includes a second bonding area electrically connected to the second connection terminal, and
• the first insulating member includes a terrace portion extending from an end portion of the second power terminal toward the first connection terminal in a plan view of the semiconductor module, and
• wherein
• the second insulating member extends up to a location to face the terrace portion of the first insulating member through a gap between the first connection terminal and the second connection terminal,
• a height from a top surface of the first power terminal that the first insulating member contacts to a top surface of the second power terminal opposite to a back surface of the second power terminal that the first insulating member contacts is greater than a sum of a thickness of the terrace portion of the first insulating member and a thickness of the second insulating member, and
• the second connection terminal is electrically connected to the second power terminal via a second laser welding mark.