Semiconductor device

A semiconductor device comprising:

• a back interlayer insulating film;
• a back wiring line in the back interlayer insulating film, and the back wiring line comprising a first surface and a second surface opposite the first surface in a first direction;
• a fin-type pattern on the first surface of the back wiring line, and extending in a second direction;
• a first source/drain pattern and a second source/drain pattern on the fin-type pattern and spaced apart in the second direction;
• a gate electrode between the first source/drain pattern and the second source/drain pattern;
• a back source/drain contact in the fin-type pattern and connected to the first surface of the back wiring line;
• a first front source/drain contact directly connected to the back source/drain contact, the first front source/drain contact comprising at least a portion in the first source/drain pattern;
• a second front source/drain contact connected to the second source/drain pattern, the second front source/drain contact comprising at least a portion in the second source/drain pattern;
• a first contact silicide film between the first front source/drain contact and the first source/drain pattern;
• and
• a second contact silicide film extending along side walls of the second front source/drain contact,
• wherein the second contact silicide film does not extend along a bottom surface of the second front source/drain contact.

A semiconductor device comprising:

• a back interlayer insulating film;
• a back wiring line in the back interlayer insulating film, the back wiring line comprising a first surface and a second surface opposite the first surface in a first direction;
• a fin-type pattern on the first surface of the back wiring line, and extending in a second direction;
• a plurality of sheet patterns on the fin-type pattern, and spaced apart from the fin-type pattern in the first direction;
• a gate electrode on the fin-type pattern, extending in a third direction, and at least partially surrounding the plurality of sheet patterns;
• a source/drain pattern on a side surface of the gate electrode, the source/drain pattern comprising a bottom surface contacting the fin-type pattern;
• a back source/drain contact in the fin-type pattern and connected to the first surface of the back wiring line;
• a contact insulating liner between the fin-type pattern and the back source/drain contact, the contact insulating liner extending along at least a portion of a side wall of the back source/drain contact;
• a front source/drain contact directly connected to the back source/drain contact, the front source/drain contact comprising a least a portion in the source/drain pattern;
• and
• a contact silicide film extending along a side wall of the front source/drain contact,
• wherein the contact silicide film does not extend along a bottom surface of the front source/drain contact.