Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Ren CHEN, Po-Cheng CHI
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Abstract
A semiconductor device includes a substrate, a plurality of oxide definition structures, a plurality of metal gates and a first conductive via. The oxide definition structures are formed on the substrate and arranged in a first direction. The metal gates are formed on the substrate and extend in a second direction. The first conductive via is formed on the substrate, located between two of the metal gates, extends in the first direction and has a first width in the second direction. There is a pitch between adjacent two of the metal gates in the second direction, and a first ratio of the first width to the pitch ranges between 0.2 and 0.7.
Claims20
A semiconductor device, comprising:
- a substrate;
- a plurality of oxide definition (OD) structures formed on the substrate and arranged in a first direction;
- a plurality of metal gates formed on the substrate and extending in a second direction;
- and
- a first conductive via formed on the substrate, located between two of the metal gates, extending in the first direction and having a first width in the second direction;
- wherein there is a pitch between adjacent two of the metal gates in the second direction, and a first ratio of the first width to the pitch ranges between 0.2 and 0.7.
A semiconductor device, comprising:
- a substrate;
- a plurality of OD structures formed on the substrate and arranged in a first direction;
- a plurality of metal gates formed on the substrate and extending in a second direction;
- and
- a first conductive via formed on the substrate, located between two of the metal gates, extending in the first direction and comprising a first portion and a base portion;
- wherein the base portion has a first lateral surface, and the first portion has a second lateral surface recessed with respect to the first lateral surface.
A semiconductor device, comprising:
- a substrate;
- a plurality of OD structures formed on the substrate and arranged in a first direction;
- a plurality of metal gates formed on the substrate and extending in a second direction;
- a first conductive via formed on the substrate, located between two of the metal gates, extending in the first direction and comprising a first portion;
- a second conductive via formed above and connected with the first conductive via;
- and
- an epitaxy layer formed below the first conductive via;
- wherein the first portion is staggered with the epitaxy layer and the second conductive via in the second direction.
Dependencies are inferred from the claim text.