Semiconductor package including thermal interfacial material patterns

A semiconductor package comprising:

• a first semiconductor chip disposed on a package substrate;
• a second semiconductor chip disposed adjacent to the first semiconductor chip in a horizontal direction;
• a plurality of first thermal interfacial material patterns overlapping the first semiconductor chip in a vertical direction;
• a plurality of second thermal interfacial material patterns overlapping the second semiconductor chip in the vertical direction;
• and
• a first non-metal thermal conductive layer disposed between the plurality of first thermal interfacial material patterns,
• wherein the first semiconductor chip comprises a first heat source configured to consume first power, and
• the second semiconductor chip comprises a second heat source configured to consume second power that is less than the first power, and
• a thermal conductivity of the first non-metal thermal conductive layer in the horizontal direction is less than a thermal conductivity of the first non-metal conductive layer in the vertical direction crossing the horizontal direction.

A semiconductor comprising:

• a package substrate;
• an interposer substrate disposed on the package substrate;
• a first semiconductor chip mounted on the interposer substrate;
• a second semiconductor chip mounted on the interposer substrate and spaced apart from the first semiconductor chip in a horizontal direction;
• a plurality of first thermal interfacial material patterns overlapping the first semiconductor chip in a vertical direction;
• a plurality of second thermal interfacial material patterns overlapping the second semiconductor chip in the vertical direction;
• and
• a first non-metal thermal conductive layer disposed between the plurality of first thermal interfacial material patterns in the vertical direction,
• wherein the first semiconductor chip comprises a first heat source configured to consume first power, and
• the second semiconductor chip comprises a second heat source configured to consume second power that is less than the first power, and
• a thermal conductivity in the horizontal direction of the first non-metal thermal conductive layer is less than a thermal conductivity of the first non-metal thermal conductive layer in the vertical direction crossing the horizontal direction, and
• the plurality of first thermal interfacial material patterns are spaced apart from the second thermal interfacial material patterns.