Methods for controlling spin-on self-assembled monolayer (sam) selectivity

A method to reduce edge exclusion defects in a dielectric-on-dielectric (DoD) process, the method comprising:

• providing a substrate within a process chamber, the substrate having a metal layer and a dielectric layer exposed on a surface of the substrate;
• selectively depositing a self-assembled monolayer (SAM) structure on an exposed surface of the metal layer by:
• dispensing a liquid solution onto the surface of the substrate while the substrate is spinning to coat the surface of substrate with the liquid solution, the liquid solution comprising SAM-forming molecules;
• and
• heat treating the substrate to chemically bond the SAM-forming molecules to the exposed surface of the metal layer and form the SAM structure on the exposed surface of the metal layer;
• controlling one or more process parameters used during said heat treating to ensure that the SAM structure completely covers the exposed surface of the metal layer and prevent the SAM structure from extending beyond boundaries of the metal layer and covering portions of the dielectric layer;
• and
• selectively depositing a dielectric film on an exposed surface of the dielectric layer after forming the SAM structure on the exposed surface of the metal layer, wherein said controlling the one or more process parameters during said heat treating reduces edge exclusion defects in the DoD process by ensuring that the dielectric film completely covers the exposed surface of the dielectric layer.