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US 2025/0029832 A1Published application
Formation of SiOCN Thin Films
AssigneeASM IP Holding B.V.
InventorVarun Sharma
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Abstract
Methods for depositing silicon-containing thin films on a substrate in a reaction space are provided. The methods can include vapor deposition processes comprising at least one deposition cycle including sequentially contacting the substrate with a silicon precursor comprising a halosilane and a second reactant comprising an acyl halide. In some embodiments a Si(O,C,N) thin film is deposited and the concentration of nitrogen and carbon in the film can be tuned by adjusting the deposition conditions.
Claims20
A method comprising:
- forming a thin film comprising SiOCN on a substrate in a reaction space by a cyclic vapor deposition process comprising at least one deposition cycle, wherein the at least one deposition cycle comprises:
- contacting the substrate with a vapor phase silicon precursor comprising a halosilane;
- contacting the substrate with an amine reactant;
- and
- contacting the substrate with an acyl halide reactant or a carboxylic acid reactant.
2 more elements
A method comprising:
- forming a thin film comprising silicon and oxygen on a substrate in a reaction space and in absence of an oxidizing reactant in the reaction space, wherein forming the thin film comprises performing at least one cyclic vapor deposition process comprising:
- contacting the substrate with a vapor phase silicon precursor comprising a halosilane;
- contacting the substrate with an amine reactant;
- and
- contacting the substrate with an acyl halide reactant or a carboxylic acid reactant.
2 more elements
Dependencies are inferred from the claim text.