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US 2025/0029831 A1Published application
Process and apparatus for radical enhanced vapor deposition
AssigneeASM IP Holding B.V.
InventorTommi Tynell
Life of this patent
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Abstract
The present disclosure relates to methods and systems for forming a radical treated film on a surface of a substrate. More particularly, the disclosed methods and systems utilize radical treatment to treat a film which has been deposited on the surface of a substrate. The radical treatment takes place in a radical treatment chamber and the deposition takes place in a deposition chamber, wherein the chambers are operationally coupled to allow a substrate to be transferred between them without any air break.
Claims23
A method for forming a radical treated film on a surface of a substrate, comprising:
- a. providing a substrate;
- and
- b. executing one or more super cycles, individual super cycles comprising a deposition step and a radical treatment step;
- wherein the deposition step comprises feeding a precursor in vapor phase into a deposition chamber to deposit a film onto the substrate;
- wherein the radical treatment step comprises generating a remote plasma, obtaining a radical flow from the remote plasma, and exposing the substrate to the radical flow in a radical treatment chamber;
- and
- wherein the deposition chamber and the radical treatment chamber are operationally coupled to allow a substrate to be transferred between them without any air break.
4 more elements
A semiconductor processing apparatus comprising:
- one or more process chambers, each process chamber comprising two or more stations, each station comprising an upper compartment and a lower compartment,
- wherein the upper compartment is configured to contain a substrate during processing of the substrate;
- wherein the lower compartment comprises a shared intermediate space between the two or more stations;
- a first transfer system configured to move a substrate from a first process chamber to a second process chamber in a wafer handling chamber;
- a second transfer system configured to move the substrate from a first station to a second station within the shared intermediate space of a process chamber;
- a first heating unit configured to control a first station temperature independently of a second station temperature;
- a pressure system comprising a pump and exhaust, the pressure system configured to maintain a common process chamber pressure in the two or more stations;
- and
- a controller comprising a processor that provides instructions to the apparatus to control a cycle of:
- (a) placing a substrate in a first station;
- (b) depositing a film on the substrate in the first station by a vapor deposition process;
- (c) after depositing the film on the substrate, placing the first substrate in the second station;
- (d) performing a radical treatment on the substrate by supplying a radical flow to the station to form a modified film;
- and
- repeating (a)-(d) in a cycle until a film of desired thickness is deposited on the substrate.
12 more elements
A method for film deposition, the method comprising:
- (a) placing a substrate in a first station, the first station comprising an upper chamber and a lower chamber, wherein the lower chamber comprises a shared intermediate space between the first station, a second station, a third station, and a fourth station;
- (b) contacting the substrate in the first station with a precursor, wherein the contacting with the precursor forms a first film layer on the first substrate;
- (c) after contacting the substrate in the first station with the precursor, placing the substrate in the second station;
- (d) performing a first radical treatment on the substrate by contacting the surface of the first film layer with a radical flow;
- (e) after performing the first radical treatment on the substrate, placing the substrate in the third station;
- (f) contacting the substrate in the third station with the precursor, wherein the contacting with the precursor forms a second film layer on the first substrate;
- (g) after contacting the substrate in the third station with the precursor, placing the substrate in the fourth station;
- (h) performing a second radical on the substrate by contacting the surface of the second film layer with a radical flow;
- and
- repeating (a)-(h) in a cycle until a film of desired thickness is deposited on the first substrate.
7 more elements
Dependencies are inferred from the claim text.