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US 2025/0029792 A1Published application
Methods for Perovskite Device Processing by Vapor Transport Deposition
AssigneeFirst Solar, Inc.
InventorsLe Chen, David Ho, Xiaoping Li, Rick Powell, Tze-Bin Song, Vera Steinmann, Aravamuthan Varadarajan, Dirk Weiss, Gang Xiong, Zhibo Zhao
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Abstract
Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.
Claims19
An intermediate structure for a perovskite photovoltaic device, comprising:
- a substrate stack, comprising a first electrode over a substrate, and a first charge transport layer over the first electrode;
- and
- a precursor layer over the first charge transport layer;
- wherein:
- the precursor layer has a thickness in a range of 100 nm to 2000 nm, and
- the precursor layer comprises a plurality of metal halide crystal grain structures, wherein the crystal grain structures have a grain height, normal to a surface of the substrate stack, and a grain width, parallel to the surface of the substrate stack, and an average grain width is less than a third of an average grain height.
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An intermediate structure for a perovskite photovoltaic device, comprising:
- a substrate stack, comprising a first electrode over a substrate, and a first charge transport layer over the first electrode;
- and
- a precursor layer over the first charge transport layer, wherein:
- the precursor layer comprises a metal halide,
- the precursor layer comprises a plurality of crystalline grains, and
- 30-100% of the crystalline grains have at least one dimension in a range of 200-800 nm.
3 more elements
A method of making a perovskite absorber layer of a photovoltaic device comprising:
- providing an intermediate structure comprising a precursor layer over a substrate stack, wherein the precursor layer comprises a first perovskite-forming composition having a plurality of metal halide crystal grain structures;
- exposing the intermediate structure to a second perovskite-forming composition, wherein the second perovskite-forming composition, includes at least one of:
- a cesium (Cs) cation, a rubidium (Rb) cation, a methylammonium (MA) compound, or a formamidinium (FA) compound;
- and
- annealing the intermediate structure with the second perovskite-forming composition.
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Dependencies are inferred from the claim text.