Corrective read on partially programmed blocks

An apparatus, comprising:

• an array of memory cells;
• a controller coupled to the array of memory cells and the controller is configured to:
• perform a corrective read operation on a boundary word line of a partially programmed block, wherein the corrective read operation includes:
• applying a first corrective read voltage signal to the boundary word line of the partially programmed block during a read operation on the boundary word line;
• applying a second corrective read voltage signal to a word line adjacent to the boundary word line during the corrective read operation;
• applying a first pass voltage to a number of unprogrammed word lines of the partially programmed block during the corrective read operation;
• and
• applying a second pass voltage to a first number of programmed word lines of the partially programmed block that are nonadjacent to the boundary word line.

A method, comprising:

• receiving a corrective read command in response to a bit error count of a read operation being above a threshold amount;
• determining the corrective read command is for data on a partially programmed block;
• performing a corrective read operation on a target word line of the partially programmed block by:
• applying a first of corrective read voltage signal to the target word line during the corrective read operation on the target word line of the partially programmed block;
• applying a second corrective read voltage signal to a word line adjacent to the target word line during the corrective read operation;
• applying a first pass voltage to a number of unprogrammed word lines of the partially programmed block during the corrective read operation;
• and
• applying a second pass voltage to a first number of programmed word lines of the partially programmed block that are nonadjacent to the target word line during the corrective read operation.