Programming method of a memory, memory and memory system

A memory, comprising:

• a memory cell array comprising a first memory cell slice and a second memory cell slice;
• a first word line coupled to a plurality of memory cells of the first memory cell slice and a plurality of memory cells of the second memory cell slice;
• a first select line coupled to a select transistor of the first memory cell slice;
• a second select line coupled to a select transistor of the second memory cell slice;
• and
• a peripheral circuit coupled to the first word line, the first select line, and the second select line respectively, and configured to:
• apply a program voltage to the first word line;
• and
• during a stage of applying the program voltage to the first word line, apply a turn-on voltage to the first select line and the second select line sequentially.

A memory system, comprising:

• a memory comprising:
• a memory cell array comprising a first memory cell slice and a second memory cell slice;
• a first word line coupled to a plurality of memory cells of the first memory cell slice and a plurality of memory cells of the second memory cell slice;
• a first select line coupled to a select transistor of the first memory cell slice;
• a second select line coupled to a select transistor of the second memory cell slice;
• and
• a peripheral circuit coupled to the first word line, the first select line, and the second select line respectively, and configured to:
• apply a program voltage to the first word line;
• and
• during a stage of applying the program voltage to the first word line, apply a turn-on voltage to the first select line and the second select line sequentially;
• and
• a memory controller configured to control the memory.