Stack-type memory device and method of manufacturing the same

Abstract

A stack-type memory device may include a memory cell array, a peripheral circuit block and a leakage control block. The memory cell array may include at least one memory cell string. The memory cell string may include a plurality of memory cells vertically stacked. The peripheral circuit block may include circuits configured to control operations of the memory cells. The leakage control block may be arranged between the memory cell array and the peripheral circuit block. The leakage control block may include at least one selection switch. The selection switch may selectively connect the memory cell string with the peripheral circuit block and disconnect the memory cell string from the peripheral circuit block. The memory cell array, the leakage control block and the peripheral circuit block may be stacked in the vertical direction.

Dependencies are inferred from the claim text.