Memory device including variable serial resistive element having voltage dividing effect and operating method thereof

Abstract

A memory device including a variable serial resistive element having a voltage dividing effect and an operating method thereof are disclosed. The memory device includes a memory unit, a variable serial resistive element connected to the memory unit, a controller connected to the variable serial resistive element and configured to control a resistance of the variable serial resistive element, and a power source connected to the variable serial resistive element. The operating method of the memory device includes maintaining a resistance of a serial resistive element connected to a memory element as a first resistance during a first operation of the memory element and maintaining the resistance of the serial resistive element as a second resistance during a second operation of the memory element, wherein the serial resistive element includes a variable resistive element.

Dependencies are inferred from the claim text.