Resistive random access memory unit with one-way conduction characteristic and fabricating method thereof

A fabricating method of a resistive random access memory unit with one-way conduction characteristic, comprising:

• performing an initializing step, wherein the initializing step comprises providing the resistive random access memory unit, an original state of the resistive random access memory unit is a high resistive state, the resistive random access memory unit comprises an upper metal layer, a via and a lower metal layer, the upper metal layer is connected to the via, and there is a gap between the lower metal layer and the via;
• performing a forming step, wherein the forming step comprises applying a setting voltage on the lower metal layer, and coupling the upper metal layer to a ground voltage to transform the resistive random access memory unit from the high resistive state to a low resistive state;
• and
• performing a reverse resetting step, wherein the reverse resetting step comprises coupling the lower metal layer to the ground voltage and applying a resetting voltage to the upper metal layer to transform the resistive random access memory unit from the low resistive state to a one-way conduction state;
• wherein when a reading voltage between the lower metal layer and the upper metal layer is greater than 0 V, a forward reading current flows through the lower metal layer, the via and the upper metal layer in sequence, when the reading voltage between the lower metal layer and the upper metal layer is less than 0 V, a reverse reading current flows through the upper metal layer, the via and the lower metal layer in sequence, the forward reading current is greater than the reverse reading current, and the forward reading current is less than 3000 times of the reverse reading current.