Magnetic memory device

A magnetic memory device comprising:

• a spin hall conductive layer;
• an operation magnetic track layer and a copy magnetic track layer, stacked in a first direction on the spin hall conductive layer;
• a spacer layer between the operation magnetic track layer and the copy magnetic track layer;
• a tunnel barrier layer on the copy magnetic track layer;
• and
• a plurality of magnetic tunnel junction sensors on the tunnel barrier layer,
• wherein the operation magnetic track layer and the copy magnetic track layer have magnetization directions parallel to each other at positions overlapping each other in the first direction based on a leakage magnetic field of the operation magnetic track layer.

A magnetic memory device comprising:

• a lower magnetic track layer including a plurality of first magnetic domains and a plurality of first magnetic domain walls alternately arranged and extending in a first direction;
• a spacer layer on the lower magnetic track layer and extending in the first direction, the spacer layer having a thickness of about 1 nm to about 5 nm;
• an upper magnetic track layer including a plurality of second magnetic domains and a plurality of second magnetic domain walls alternately arranged and extending in the first direction, the upper magnetic track layer being on the spacer layer;
• and
• a plurality of read units on the upper magnetic track layer, the plurality of read units being configured to read a magnetization direction of the upper magnetic track layer and being arranged apart from one another in the first direction,
• wherein the plurality of first magnetic domain walls and the plurality of second magnetic domain walls overlap each other in a second direction perpendicular to the first direction, and
• wherein the plurality of first magnetic domains and the plurality of second magnetic domains have magnetization directions parallel to each other at positions overlapping each other in the second direction.