Physically obfuscated circuit

A physically obfuscated circuit, comprising:

• multiple subcircuits, wherein each subcircuit comprises the following:
• multiple series-connected transistors of a first conductivity type;
• at least one transistor of a second conductivity type different from the first conductivity type;
• wherein the transistors are connected such that
• the multiple series-connected transistors of the first conductivity type, if they are supplied with a first reference potential at their respective control terminal, deliver a second reference potential different from the first reference potential to the control terminal of the at least one transistor of the second conductivity type;
• and
• the at least one transistor of the second conductivity type, if it is supplied with a second reference potential at its control terminal, delivers the first reference potential to the control terminal of each transistor of the multiple series-connected transistors of the first conductivity type;
• and
• a precharge circuit that is configured to precharge the subcircuit to a first state in which the potential at the control terminal of the at least one transistor of the second conductivity type is different from the second reference potential and the potential at the control terminal of each of the multiple series-connected transistors of the first conductivity type is different from the first reference potential;
• a physically obfuscated circuit value bit generation circuit configured to generate at least one physically obfuscated circuit value bit depending on which of the subcircuits is first to enter a second state in which the potential at the control terminal of the at least one transistor of the second conductivity type is the second reference potential and the potential at the control terminal of each of the multiple series-connected transistors of the first conductivity type is the first reference potential;
• and
• wherein at least one subcircuit of the multiple subcircuits has a discharge circuit that is connected to a connection node between two transistors of the multiple series-connected transistors of the first conductivity type for the controlled discharge of electric charge from the connection node.