Method for detecting defects in semiconductor structure and method for classifying semiconductor structure

A method for detecting defects in a semiconductor structure, the method comprising:

• providing a semiconductor structure having a plurality of conductive structures;
• performing an electron beam inspection operation on the plurality of conductive structures of the semiconductor structure to obtain an inspection data, wherein a response time of a pulsed electron beam used in the electron beam inspection operation is accelerated to a level shorter than microseconds;
• and
• identifying a first conductive structure having a non-open defect from the inspection data.

A method for classifying semiconductor structure, the method comprising:

• receiving a semiconductor structure having a plurality of conductive structures;
• performing an electron beam inspection operation on the plurality of conductive structures of the semiconductor structure to obtain an inspection data, wherein a response time of a pulsed electron beam used in the electron beam inspection operation is shorter than a level of microsecond;
• and
• classifying the semiconductor structure having the plurality of conductive structures based on the inspection data, wherein the semiconductor structure is classified into a first group or a second group depending on a predetermined resistance of each conductive structure of the semiconductor structure in the inspection data.