Composition For Forming Resist Underlayer Film, Patterning Process, And Method For Forming Resist Underlayer Film

Abstract

The present invention is a composition for forming a resist underlayer film, containing: (A) a polymer having a structure represented by the following general formula (1) as a repeating unit; and (B) an organic solvent, where the polymer (A) has a molecular weight of 300 to 3,000, and the polymer (A) contains neither a repeating unit containing a hydroxy group as a substituent nor a repeating unit containing a heteroaromatic ring, and where Ar represents an unsubstituted divalent aromatic group having 6 to 30 carbon atoms. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits much better dry etching resistance than those of conventional organic underlayer film materials. Ar—CH2  (1)

Dependencies are inferred from the claim text.