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US 2025/0028243 A1Published application
Resist composition and pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Tomomi Watanabe, Takayuki Fujiwara
Life of this patent
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Abstract
The resist composition exhibits higher sensitivity and improved LWR or CDU. The resist composition comprises a base polymer containing repeat units (a) containing a substituted or unsubstituted arylsulfonic acid anion bonded to a polymer backbone having a group containing an iodine atom or a bromine atom and an onium cation.
Claims8
A resist composition comprising a base polymer containing repeat units (a) containing a substituted or unsubstituted arylsulfonic acid anion bonded to a polymer backbone having a group containing an iodine atom or a bromine atom and an onium cation.
Dependencies are inferred from the claim text.