Pellicle for extreme ultraviolet lithography and method for manufacturing same

A method for manufacturing a pellicle for extreme ultraviolet (EUV) lithography including a pellicle film that is penetrated by extreme ultraviolet (EUV) rays and a support frame that supports the pellicle film, the method comprising the steps of:

• (S1) forming a multilayer including a carbon layer, a metal catalyst layer, and an amorphous silicon layer on a substrate;
• (S2) finally forming a multilayer thin film in which the c-Si layer and a graphene layer are heterojunctioned by simultaneously or sequentially performing steps of crystallizing the amorphous silicon layer with changing the amorphous silicon layer to a c-Si layer while a surface of the amorphous silicon layer is heated through irradiation of an electron beam thereto and the heat is diffused downward, diffusing carbon of the carbon layer by making the carbon of the carbon layer come up to an interface of the c-Si/metal catalyst layers through the metal catalyst layer, and then making the come-up carbon form a graphene at the interface;
• (S3) performing diffusion bonding through a binder layer by making a support frame come in face-to-face contact with the binder layer on an outer periphery of the multiplayer after forming the binder layer on the outer periphery of the multilayer and forming the binder layer also on a surface of the face-to-face support frame;
• and
• (S4) lifting off the multilayer thin film attached to the frame from the substrate.