Semiconductor chemical precursor with gas passages
AssigneeApplied Materials, Inc.
InventorDavid Marquardt
Life of this patent
Estimating the term…
Abstract
Ampoules including a solid volume of the semiconductor chemical precursor and methods of use and manufacturing are described. The solid volume of the semiconductor chemical precursor includes an ingress opening, at least one flow channel, and an outlet passage that are in fluid communication with each other. The solid volume of the semiconductor manufacturing precursor is made of a porous or alternatively a non-porous material. A flow path is defined by at least one flow channel through which a carrier gas flows in contact with the solid volume of the semiconductor chemical precursor.
Claims20
An ampoule comprising:
- a container defining a cavity configured to hold a solid volume of the semiconductor chemical precursor;
- an inlet port and an outlet port, both in fluid communication with the solid volume of the semiconductor chemical precursor;
- the solid volume of the semiconductor chemical precursor defined by a top edge, a bottom edge, a perimeter and at least one flow channel in the solid volume of the semiconductor chemical precursor;
- and
- at least one flow path defined by the at least one flow channel through which a carrier gas flows in contact with the solid volume of the semiconductor chemical precursor.
A method forming a film in a semiconductor processing chamber, the method comprising:
- flowing a carrier gas through an inlet port of an ampoule having a solid volume of a semiconductor chemical precursor therein;
- directing the flow of the carrier gas within the ampoule and in contact with the solid volume of a semiconductor chemical precursor through at least one flow path defined by at least one flow channel in the solid volume of a semiconductor chemical precursor, the at least one flow channel having an ingress opening, through which a carrier gas flows in contact with the solid volume of a semiconductor chemical precursor and an outlet passage through which the carrier gas flows out of the solid volume of a semiconductor chemical precursor;
- and
- flowing the carrier gas and the semiconductor chemical precursor out of the ampoule through the outlet passage to an outlet port.
A solid volume of a semiconductor chemical precursor, comprising:
- a top edge, a bottom edge, and a perimeter defining a solid volume of the semiconductor chemical precursor, the semiconductor chemical precursor having at least one flow channel, an ingress opening, and an outlet passage, wherein the at least one flow channel is in fluid communication with the ingress opening and the outlet passage;
- and
- at least one flow path defined by the at least one flow channel through which a carrier gas flows in contact with the semiconductor chemical precursor.
Dependencies are inferred from the claim text.