Quantum dot film, and quantum dot light-emitting diode and preparation method therefor
AssigneeTcl Technology Group Corporation
InventorsZhiwen NIE, Xiaolin YAN
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Abstract
Provided in the embodiments of the present application are a quantum dot film, and a quantum dot light-emitting diode and a preparation method therefor. The quantum dot film comprises a first quantum dot, a second quantum dot and a first ligand. By means of the first ligand, first excitons generated by the first quantum dot can be stacked with second excitons generated by the second quantum dot, and the quantum dots of the whole hybrid system have the advantages of quantum dots of two different types by means of the stacking effect between the excitons, such that the light emission performance of the quantum dot light-emitting diode is improved.
Claims20
A quantum dot film, comprising:
- quantum dots, surfaces of at least part of the quantum dots connected with a first ligand, and the quantum dots comprising a first quantum dot and a second quantum dot;
- wherein, the first ligand is configured to stack first excitons generated by the first quantum dot with second excitons generated by the second quantum dot.
A preparation method for a quantum dot light-emitting diode, comprising:
- providing a first electrode;
- forming a quantum dot film on the first electrode, and thermally annealing to form a quantum dot light-emitting layer;
- and
- forming a second electrode on the quantum dot light-emitting layer;
- wherein, the quantum dot film comprises quantum dots, surfaces of at least part of the quantum dots are connected with a first ligand, the quantum dots comprise a first quantum dot and a second quantum dot, wherein, the first ligand is configured to stack first excitons generated by the first quantum dot with second excitons generated by the second quantum dot.
Dependencies are inferred from the claim text.